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  wsb5503 w middle power schottky barrier diode features ? 1a average rectified forward current ? low forward voltage ? low leakage current ? small package sod - 323 applications ? switching circuit ? middle current rectification absolute maximum ratings electronics characteristics (t a =25 o c) order info rmations note 1 : pulse width=1 u s , single pulse note 2 : * = month code (a~z) ; . l = device code sod - 323 circuit marking parameter symbol value unit r everse voltage (repetitive peak) v rm 40 v r everse voltage (dc) v r 40 v average rectified forward current i o 1 a peak forward current ( 1 ) i pk 25 a junction temperature t j 12 5 o c operating temperature topr - 40 ~ 85 o c storage temperature tstg - 55 ~ 15 0 o c parameter symbol condition min. typ. max. unit forward voltage v f i f =1a - 0. 5 0. 5 7 v reverse current i r v r =v r - 10 50 ua junction capacitance c j v r =4v, f=1mhz - - 120 pf device package marking shipping wsb5503 w - 2/tr sod - 323 * . l ( 2 ) 3000/reel&tape 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
t ypical c haracteristics (ta=25 o c, unless otherwise noted) forward voltage vs. forward current p eak p ulse forward current characteristics power derating reverse current vs. reverse voltage junc tion capacitance vs. reverse voltage 0 100 200 300 400 500 600 700 800 1e-3 0.01 0.1 1 ta=85 o c ta=-40 o c ta=25 o c forward current: i f (a) forward voltage: v f (mv) 0 5 10 15 20 25 30 35 40 0.01 0.1 1 10 100 1000 ta=25 o c ta=-40 o c ta=85 o c reverse current: i r (ua) reverse voltage: v r (v) 1 10 100 0 5 10 15 20 25 30 peak forward current: i pk (a) time: t (us) 0 10 20 30 1 10 100 1000 f = 1mhz v ac = 50mvrms capacitance: c j (pf) reverse voltage: v r (v) 0 25 50 75 100 125 0 20 40 60 80 100 120 % of rated power t j -lead temperature wsb5503 w 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 0 100 200 300 400 500 600 700 800 1e-3 0.01 0.1 1 ta=85 o c ta=-40 o c ta=25 o c forward current: i f (a) forward voltage: v f (mv) 0 5 10 15 20 25 30 35 40 0.01 0.1 1 10 100 1000 ta=25 o c ta=-40 o c ta=85 o c reverse current: i r (ua) reverse voltage: v r (v) 1 10 100 0 5 10 15 20 25 30 peak forward current: i pk (a) time: t (us) 0 10 20 30 1 10 100 1000 f = 1mhz v ac = 50mvrms capacitance: c j (pf) reverse voltage: v r (v) 0 25 50 75 100 125 0 20 40 60 80 100 120 % of rated power t j -lead temperature
package outline dimensions sod - 323 symbol dimensions in millimeter min. typ. max. a - - 1.0 00 a1 - - 0.100 a2 0.8 00 0. 850 0.9 00 b 0.25 0 0.300 0.35 0 c 0.080 0.115 0.150 d 1 . 2 00 1.3 00 1.4 00 e 1. 6 0 0 1. 70 0 1. 8 0 0 e1 2. 500 2. 600 2. 700 l 0.475 (ref) l1 0. 25 0 0. 325 0.40 0 wsb5503 w 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification


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